PCIM News | BASiC Semiconductor Announces 2000V SiC MOSFETs
PCIM Europe 2024, the world's largest power semiconductor exhibition, was held in Nuremberg, Germany from June 11-13. BASiC Semiconductor once again made their debut at the exhibition and officially released new products such as 2000V/1700V high-voltage SiC MOSFETs, automotive-grade SiC MOSFETs, third-generation SiC MOSFETs, and industrial SiC power modules PcoreTM2 E2B, attracting the attention of industry professionals for in-depth exchanges.
The new products released by BASiC Semiconductor cover two categories: power modules and discrete devices. The performance of the new products has been greatly improved, the application range is also extended. The products can be widely used in electric vehicles, DC fast charging, solar & energy storage systems, industrial power supplies, communication power supplies etc., to achieve higher energy efficiency and application reliability.
2000V/1700V high-voltage SiC MOSFETs
To meet the high voltage and high power application demands in solar & energy storage systems, BASiC Semiconductor has developed and launched the 2000V 24mΩ and 1700V 600mΩ high-voltage series SiC MOSFETs, which feature low on-resistance, low conduction loss, low switching loss, and allow higher switching frequency operation.
The 1700V 600mΩ SiC MOSFETs can be adapted to the flyback topology of auxiliary power supplies in string sola inverters and energy storage systems, improving the efficiency of the auxiliary power supply while making it safer and more reliable to operate.
1200V 18mΩ SiC MOSFETs
To meet the demand for high-power applications such as motor drives, energy storage systems, high-power EV charging, BASiC Semiconductor has developed and launched 1200V 18mΩ SiC MOSFET B2M018120Z, which features low on-resistance, low conduction loss, low switching loss, and allow higher switching frequency operation. They can be driven via the Kelvin connection to reduce the stray inductance of the drive circuit.
Automotive-grade SiC MOSFETs
In response to the demands in electric vehicles, BASiC Semiconductor has developed and launched 1200V 80mΩ and 40mΩ SiC MOSFETs that meet AECQ-101 certification and PPAP requirements, which can be used in on-board chargers and automotive air-conditioning compressor drives.
The third-generation SiC MOSFETs
B3M040120H/Z are the latest products developed by BASiC Semiconductor based on the third-generation SiC MOSFET technology platform.This series of products further optimizes the passivation layer, improves reliability, and provides further improvements in on-resistance, switching loss, and reliability in comparison to the previous generation of products.
Industrial SiC power modules PcoreTM2 E2B
The MF240R12E2G3 is a 1200V 5.5mΩ industrial full-SiC half-bridge power module in PcoreTM2 E2B package. The product adopts an integrated NTC temperature sensor, Press-Fit crimp technology, and a high reliability Si3N4 AMB ceramic substrate. It has excellent performance in terms of on-resistance, switching loss, cross-talk immunity, and bipolar degradation immunity.
Industrial SiC Half-Bridge Top-Side Cooling MOSFET Modules
The B2M040120T and B2M080120T are top-side cooling package, internally insulated, plastic sealed half-bridge modules developed by BASiC Semiconductor based on its second-generation SiC MOSFET technologies. They can be used in on-board chargers (OBC), air conditioning compressors and industrial power supplies.
Dual-Channel Isolated Drivers BTD25350 Series
BASiC Semiconductor has launched the dual channel isolated gate driver IC BTD25350 with Miller-clamp. The product is designed for the gate driver of SiC MOSFETs, which can efficiently and reliably inhibit the false turn-on of SiC MOSFETs, and can also be used to drive Si MOSFETs, IGBTs.
PCIM Europe 2024 was successfully held, and BASiC Semiconductor continued to achieve remarkable results, with a bustling crowd at the exhibition booth and continuous business negotiations. Thanks to our clients at home and abroad for their trust and support, we will continue to focus on the SiC power devices, through innovation and product upgrading, to provide global customers with higher performance, more reliable products!