New Products | BASiC Semiconductor Announces New-Generation SiC MOSFETs
Recently, BASiC Semiconductor officially launched its new-generation SiC MOSFET which cover 1200V/13.5mΩ and 750V/10.5mΩ for automotive main drive, 1200V/40mΩ for photovoltaic and energy storage, and 650V/40mΩ for AI power supplies & household storage inverters. This series of product will significantly improve the system efficiency and high-temperature performance of various applications, reduce energy loss, and contribute to more efficient and cost-effective power device solutions.
Parameter list for New-Generation SiC MOSFETs
For delivery BASiC Semiconductor offers the options of both bare die and wafer. The commonly used packages for different application scenarios are also available:
The 1200V/13.5mΩ series in TO-247-3 and TO-247-4 packages.
The 1200V/40mΩ series in TO-247-3, TO-247-4, TO-263-7, and HSOP8 packages.
The 650V/40mΩ series in TO-247-3, TO-247-4, TO-263-7, TOLL, and TOLT packages.
Based on the reliability-oriented closed-loop development, BASiC Semiconductor has achieved the verification of key reliability tests at or above automotive-grade reliability standards:
HTRB：Tj=175℃，VDS=100%BV，1000H，PASS
H3TRB：TA=85℃/85%RH，VDS=80%BV，1000H，PASS
HTGB+：Tj=175℃；VGS=22V，1000H，PASS
HTGB-：Tj=175℃；VGS=-10V，1000H，PASS
Packaging Characteristics
TO-263-7：
Surface-mount package, compact size.
Specially designed source pins for superior electrica
performance, effectively reducing losses and noise.
HSOP8：
Thin and compact design with multi-pin fine-pitch layout.
Integrated cooling structure, delivering excellent electrical performance.
TOLL：
TO-Leadless design, compact and space-saving.
Low package resistance & parasitic inductance for enhanced efficiency.
Top-side cooling design supports high-current applications.
TOLT(TO-Leadless with Top-side cooling)：
Top-side cooling structure for higher thermal reliability.
Especially suitable for applications with stringent thermal management requirements.
Applications
1200V 13.5mΩ discretes and modules: EV Main Drive Inverters, PCS, APF
1200V 40mΩ discretes and modules: Photovoltaic Power Generation, Energy Storage Systems,Charging Station, Welding Machines, OBC, and Automotive Air Conditioning Compressors
750V 10.5mΩ discretes and modules: EV Main Drive Inverters, OBC and DCDC converters
650V 40mΩ discretes: AI Computing Power Supplies, Micro Inverters, Telecom Power and Energy Storage Systems
The latest SiC MOSFET series from BASiC Semiconductor achieves the industry's advanced level in key parameters such as on-resistance, switching losses, and thermal resistance. Through continuous technological innovation and process optimization, BASiC is committed to delivering higher-performance, more reliable power semiconductor solutions. In the future, BASiC Semiconductor will continue to increase R&D investmentand collaborate with partners to promote the development of clean energy technologies, to build a highly efficient and sustainable energy ecosystem.