BASiC Semiconductor At IAA MOBILITY 2023, Munich Germany
On September 5th, IAA MOBILITY 2023, the globally leading mobility industry exchange platform, officially opened in Munich, Germany. BASiC Semiconductor, with its full range of automotive SiC power modules, SiC MOSFETs, and gate driver ICs, made its overseas debut at this event, discussing the low-carbon, clean, and efficient future of mobility with numerous global automotive manufacturers.
SiC as a Medium for Shaping an Efficient, Sustainable Mobility Path
As one of the top five auto shows globally, IAA MOBILITY 2023, themed "Experience Connected Mobility", set up three major thematic sections: future mobility, sustainable development and technology. Numerous globally renowned OEMs and Tier 1 suppliers, such as BMW, BYD, Mercedes-Benz, Volkswagen, Bosch, Continental, Magna, and ZF, gathered to showcase the latest automotive technologies, smart mobility solutions, and sustainable transportation innovations.
With the innovation and development of electric vehicles, IAA MOBILITY 2023 focused specifically on the joint realization of sustainable transportation goals. Electrification, efficiency, intelligence, and lightweighting became the key words of the expo. SiC power devices, which can bring higher conversion efficiency and lower energy loss have attracted much attention. The automotive full-SiC power modules, SiC MOSFETs, and related gate driver products launched by BASiC Semiconductor have attracted high attention from many OEMs and Tier1 suppliers.
Automotive SiC Power Modules
The automotive SiC power modules——Pcore™6, Pcore™2, exhibited by BASiC Semiconductor adopt advanced packaging technologies such as full silver sintering, DTS+TCB (Die Top System + Thick Cu Bonding). They achieve convincing performance in parameters such as gate input capacitance, stray inductance and thermal resistance. They can strongly support car manufacturers to replace silicon with SiC in motor drives, significantly improve vehicle efficiency, and reduce manufacturing and usage costs.
2nd-generation SiC MOSFETs
The 2nd-generation SiC MOSFETs from BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance (reduced by about 40%), switching loss (reduced by about 30%), and reliability. These improvements allow EVs, DC fast charging, solar and energy storage systems, industrial power supplies, telecommunication power supplies etc. to achieve higher energy efficiency and reliability.
Gate Driver ICs
BASiC Semiconductor has developed gate driver ICs for a variety of application scenarios, adaptable to different power devices. Our gate driver ICs include isolated driver ICs and low-side driver ICs, with insulation withstand voltage up to 8000V, drive current up to ±15A, supporting gate driver requirements for power devices with withstand voltage up to 1700V. They can be widely used in the fields of OBC, main and auxiliary motor drives of EVs, charging stations, solar and energy storage systems, industrial power supplies, UPS, commercial air-conditioning, etc.
BASiC Semiconductor has always been committed to the on-board application of SiC power devices, continuously accelerating the R&D, manufacturing, and market expansion of automotive-grade products. BASiC's automotive SiC power module has entered mass-production, with a current annual capacity of 250,000 modules, and has been designated by nearly 20 OEMs and Tier1 electric drive customers, becoming one of the first leading companies in the domestic mass production of SiC modules. The company's automotive SiC fab has also been put into operation. After the fab reaches full capacity, it is able to fulfill the chip demand of about 500,000 EVs annually, so as to supply the global EV manufacturers and jointly shape the innovative and sustainable path of future mobility.