BASiC Semiconductor introduces the 34mm industrial full-SiC half-bridge MOSFET modules. The products adopt the latest generation of SiC MOSFET technologies, demonstrating excellent performance in terms of specific on-resistance, switching loss, and reliability. The main products are BMF80R12RA3 and BMF160R12RA3.

BMF80R12RA3 (I_D=80A@T_c=100℃，R_DS(on)=15mΩ) was compared with high-speed, high-current IGBTs in a 20kW inverter of welding machine through power electronics simulations. The simulation result shows that, compared to IGBTs which only operate at a switching frequency of 20kHz, the SiC MOSFET modules can operate at higher frequencies such as 80kHz, and its total loss can be reduced by about 50% compared with IGBT modules.

Product Features

- Low on-resistance

Excellent high-temperature on-resistance performance, resulting in low conduction losses.

- Low Switching Losses

Enable inverter in welding machines to operate at higher frequencies, further reducing the weight, size, and noise while accelerating the dynamic response speed and the control of output current, the voltage waveform is also more precise.

- High output current

Low thermal resistance of the module allows higher output currents at high operating temperatures.   

Applications: Inverter in Welding Machines, Induction Heating, High-Frequency Inverters.