Die & Wafer Services
Die & Wafer Services
Die & Wafer Services
- Detail
Based on global advanced SiC epitaxial technology, BASiC has independently developed series products of bare dies. At present, 650V and 1200V SiC Schottky Diode and 1200V SiC MOSFET bare dies and wafer have been developed.
SiC Schottky Diode bare dies
| Wafer Part No. | Die Part No. | VRRM （V） | IF (A) |
| BW3D04E065S2 | BD3D04E065S2 | 650 | 4 |
| BW3D06E065S2 | BD3D06E065S2 | 650 | 6 |
| BW3D08E065S2 | BD3D08E065S2 | 650 | 8 |
| BW3D10E065S2 | BD3D10E065S2 | 650 | 10 |
| BW3D20E065S2 | BD3D20E065S2 | 650 | 20 |
| BW3D30E065S2 | BD3D30E065S2 | 650 | 30 |
| BW3D40E065S2* | BD3D40E065S2* | 650 | 40 |
| BW3D50E065S2* | BD3D50E065S2* | 650 | 50 |
| BW3D03E120S2 | BD3D03E120S2 | 1200 | 3 |
| BW3D05E120S2 | BD3D05E120S2 | 1200 | 5 |
| BW3D10E120S2 | BD3D10E120S2 | 1200 | 10 |
| BW3D15E120S2 | BD3D15E120S2 | 1200 | 15 |
| BW3D20E120S2 | BD3D20E120S2 | 1200 | 20 |
| BW3D30E120S2 | BD3D30E120S2 | 1200 | 30 |
| BW3D40E120S2 | BD3D40E120S2 | 1200 | 40 |
| BW3D50E120S2 | BD3D50E120S2 | 1200 | 50 |
| BW3D40E200S2 | BD3D40E200S2 | 2000 | 40 |
SiC MOSFET bare dies
| Wafer Part No. | Die Part No. | VDS （V） | RDS(on)@Tj=25°C (mΩ) |
| BW2M160A120S | BD2M160A120S | 1200 | 160 |
| BW2M080A120S | BD2M080A120S | 1200 | 80 |
| BW2M065A120S | BD2M065A120S | 1200 | 65 |
| BW2M040A120S | BD2M040A120S | 1200 | 40 |
| BW2M030A120S | BD2M030A120S | 1200 | 30 |
| BW2M600A170S | BD2M600A170S | 1700 | 600 |
