SiC MOSFETs can operate at high-frequency, high blocking voltage, and high-temperature, thus are currently the most popular WBG power semiconductor devices in power electronics. The application of SiC MOSFET devices in power electronic systems instead of traditional Silicon IGBT devices increases the switching frequency, improves system efficiency and power density, meanwhile reduces the overall cost.

The 2nd-generation SiC MOSFET series from BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance, switching loss, and reliability.

Applications：EV motor controllers, On-board power supplies, Solar inverters, PV-Storage Integrated Converter, EV charging, UPS, etc.

Product advantage

Lower Specific On-Resistance	Lower Switching Losses	Higher Reliability	Higher Operating Junction Temperature

SiC MOSFET

      : Automotive

      * : Under development, to be released.