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SiC MOSFET（2023年6月更新前备份）

SiC MOSFETs can operate at high-frequency, high blocking voltage, and high-temperature, thus are currently the most popular WBG power semiconductor devices in the field of power electronics. The application of SiC MOSFET devices in power electronic systems instead of traditional silicon IGBT devices increases the switching frequency, improves system efficiency and power density, meanwhile reduces the overall cost of systems.

The 2nd-generation SiC MOSFET series from BASiC Semiconductor are developed on a 6-inch wafer platform and outperform its predecessor in terms of specific on-resistance, switching loss, and reliability.

Applications：EV motor controllers, On-board power supplies, Solar inverter, PV-Storage Integrated Converter, EV charging, UPS, etc.

Product advantage

Lower Specific

On-Resistance

Lower

Switching Losses

Higher

Reliability

Higher Operating

Junction Temperature

SiC MOSFET

Generation	Voltage	R_DS(on)	_TO-247-3	_TO-247-4	_{TO-247-4-PLUS}	_TO-263-7	_SOT-227
Gen 2	1200V	65mΩ	B2M065120H	B2M065120Z		B2M065120R
		40mΩ	*B2M040120H	*B2M040120Z		*B2M040120R
		35mΩ			B2M035120YP
		20mΩ	*B2M020120H	*B2M020120Z	*B2M020120YP	*B2M020120R	*B2M020120N
Gen 1	1200V	160mΩ	B1M160120HC
		80mΩ	B1M080120HC	B1M080120HK
		32mΩ	B1M032120HC	B1M032120HK

Note 1: * indicates planned product.

Note 2: Gen 1 SiC MOSFET is not for new design.

Note3：Click blue the model name to download the Datasheet.

（汽车模块删除Pcell前备份 20230915）

Automotive full-SiC Power Modules are a series of power modules developed and launched by BASiC Semiconductor for the main inverter application of new energy vehicles. This series includes 3-Phase Full-Bridge MOSFET Module Pcore™6, Plastic Package Half-bridge MOSFET Module ‍Pcell™，and ‍Half-bridge MOSFET Module Pcore™2. With the latest advanced assembly process of SiC MOSFET packaging such as silver sintering technology. BASiC modules’ comprehensive performance has reached an international advanced level, which improves the conversion efficiency of the power system inverter, thus increasing the energy efficiency and range of new energy vehicles.

Product Advantage


High power density	High reliability	High junction temperature	Low stray inductance	Low thermal resistance

This series coversvoltage classes of 750V/1200V and the current range of 400A-700A

裸片和晶圆服务备份20230922

Based on global advanced SiC epitaxial technology, BASiC has independently developed series products of bare dies. At present, 650V and 1200V SiC schottky diode and 1200V SiC MOSFET bare dies and wafer have been developed.

SiC schottky Diodes

VRRM	Current	Part No.
650V	2A	BC1D02065
	4A	BC1D04065
	6A	BC1D06065
	8A	BC1D08065
	10A	BC1D10065
	12A	BC1D12065
	15A	BC1D15065
	20A	BC1D20065
1200V	2A	BC1D02120
	5A	BC1D05120
	10A	BC1D10120
	15A	BC1D15120
	20A	BC1D20120
	50A	BC1D50120

SiC MOSFET

VRRM	RDS(on)	Part No.
1200V	160mΩ	BC1M160120
	80mΩ	BC1M080120
	32mΩ	BC1M032120
	18mΩ	BC1M018120

Pcore™6 - Automotive 3-phase Full-bridge SiC MOSFET Module

（20231109更新前备份）

With adoption of Si₃N₄ AMB insulated substrate, copper-based PinFin substrate for direct fluid andinductive terminals for multi-signal monitoring (both soldering and press-fit compatible), Pcore™6 series is a very compact power module designed for the efficiency improvement of hybrid and electric vehicles, which features with low loss, high blocking voltage, low on-resistance, high current density and high reliability (higher than AQG-324 reference standard), etc.

Parameter List

Product	V_DSS（V）	I_D（A）	R_DS(on)（mΩ）（@T_vj=25℃）	Terminal	Pack‍age Name
BMS800R12HWC4_B02	1200	800	1.3	Standard	Pcore™6
BMS600R12HWC4_B01	1200	600	1.8
BMS950R12HWC4_B02	750	950	1.0
BMS700R12HWC4_B01	750	700	1.3

Parameter List

Product	V_DSS（V）	I_D（A）	R_DS(on)（mΩ）（@T_vj=25℃）	Terminal	Pack‍age Name
BMS800R12HLWC4_B02	1200	800	1.3	Long AC Busbar	Pcore™6
BMS600R12HLWC4_B01	1200	600	1.8
BMS950R12HLWC4_B02	750	950	1.0
BMS700R12HLWC4_B01	750	700	1.3

Automotive Full-SiC Power Modules

（20231201更新前备份）

Automotive full-SiC Power Modules are a series of power modules developed and launched by BASiC Semiconductor for the main inverter application of new energy vehicles. This series includes 3-Phase Full-Bridge MOSFET Module Pcore™6, ‍‍Half-bridge MOSFET Module Pcore™2, etc. With the latest advanced assembly process of SiC MOSFET packaging such as silver sintering technology. BASiC modules’ comprehensive performance has reached an international advanced level, which improves the conversion efficiency of the power system inverter, thus increasing the energy efficiency and range of new energy vehicles.

Product Advantage


High power density	High reliability	High junction temperature	Low stray inductance	Low thermal resistance

This series covers voltage classes of 750V/1200V and the current range of 400A-700A.

（20231228二极管备份更新）

As a wide bandgap semiconductor material, SiC has better performance than traditional silicon-based devices. The wide bandgap (3.26eV), high critical field (3 *106 V/cm) and high thermal conductivity (4.9W/cm·K) of SiC make power semiconductor devices more efficient and faster, and reduce the cost, volume and weight of equipment. The BASiC SiC Schottky diode provides standard industrial package with superior performance and high working effciency.

Product advantage


No reverse recovery current	High surge current capability	Low reverse leakage at high temperature	High Avalanche capability

Product list

Product	DataSheet	V_RRM（V）	I_F(A)	I_FSM(A)	V_F(V)	P_tot(W)	Q_C(nC)	Package Name
B2DM060065N1		1200	60	386	1.42	300	169	SOT-227
B3D05120E		1200	5	45	1.45	101	24	TO-252-2
B3D20120H		1200	20	160	1.40	259	106	TO-247-2
B3D40120HC		1200	40	160	1.40	258	106	TO-247-3
B2D60120H1		1200	60	340	1.46	833	347	TO-247-2
B2DM100120N1		1200	100*	540*	1.53	652*	465	SOT-227
B1D02065E		650	2	16	1.4	39	6.8	TO-252-2
B1D02065K		650	2	16	1.4	43	6.8	TO-220-2
B2D04065E1		650	4	31	1.3	90	14	TO-252-2
B2D04065D1		650	4	33	1.3	45	14	DFN 5*6
B2D04065KF1		650	4	41	1.33	59	13	TO-220F-2
B2D04065V		650	4	32	1.35	25	12	SMBF
B2D04065K1		650	4	34	1.33	91	14	TO-220-2
B2D06065E1		650	6	50	1.32	115	17	TO-252-3
B1D06065F		650	6	45	1.43	89	17	TO-263-2
B2D06065K1		650	6	44	1.31	133	18	TO-220-2
B2D06065KF1		650	6	59	1.31	52	18	TO-220F-2
B1D06065KS	‍	650	6	45	1.44	70	17	TO-220-isolated
B2D06065Q		650	6	45	1.33	98	17	DFN8*8
B1D08065E		650	8	60	1.43	109	24	TO-252-2
B1D08065F		650	8	60	1.43	112	24	TO-263-2
B2D08065K1		650	8	64	1.32	148	24	TO-220-2
B1D08065KF		650	8	64	1.4	48	24	TO-220F-2
B1D08065KS		650	8	64	1.46	74	24	TO-220-isolated
B2D08065KS		650	8	64	1.28	86	24	TO-220-isolated
B2D10065E1		650	10	73	1.3	125	31	TO-252-3
B2D10065F1		650	10	70	1.31	145	30	TO-263-3
B1D10065H		650	10	75	1.43	158	29	TO-247-2
B2D10065K1		650	10	85	1.31	144	29	TO-220-2
B2D10065KF1		650	10	72	1.32	76	31	TO-220F-2
B1D10065KS		650	10	75	1.43	89	29	TO-220-isolated
B2D10065Q		650	10	70	1.33	126	29	DFN8*8
B2D10065KS		650	10	85	1.36	109	29	TO-220-isolated
B1D12065K		650	12	90	1.42	170	38	TO-220-2
B1D15065K		650	15	112	1.42	194	46	TO-220-2
B2D15065K		650	15	120	1.29	211	46	TO-220-2
B2D16065HC1		650	8/16*	64*	1.32	164*	23	TO-247-3
B2D20065H1		650	20	146	1.34	300	60	TO-247-2
B2D20065HC1		650	10/20*	70*	1.34	172*	31	TO-247-3
B2D20065F1		650	20	140	1.32	230	59	TO-263-3
B2D20065K1		650	20	125	1.34	288	58	TO-220-2
B2D20065TF		650	20	70	1.3	77	60	TO-3PF
B2D30065HC1		650	30	103*	1.32	217*	45	TO-247-3
B1D30065TF		650	30	110*	1.37	72*	50	TO-3PF
B2D30065H1		650	30	200	1.38	500	83	TO-247-2
B2D40065H1		650	40	240	1.4	555	114	TO-247-2
B2D40065HC1		650	20/40*	146*	1.34	268*	59	TO-247-3
B2D02120E1		1200	2	22	1.35	77	13	TO-252-2
B2D02120K1		1200	2	20	1.35	80	13	TO-220-2
B2D05120E1		1200	5	57	1.3	122	31	TO-252-2
B2D05120K1		1200	5	55	1.3	147	32	TO-220-2
B2D10120E1		1200	10	95	1.38	151	49	TO-252-2
B2D10120H1		1200	10	90	1.36	143	51	TO-247-2
B2D10120HC1		1200	5/10*	55*	1.3	147*	31	TO-247-3
B2D10120K1		1200	10	90	1.37	185	51	TO-220-2
B2D15120H1		1200	15	135	1.34	283	84	TO-247-2
B2D16120HC1		1200	8/16*	80*	1.34	170*	48	TO-247-3
B2D20120H1		1200	20	190	1.35	366	120	TO-247-2
B2D20120F1		1200	20	180	1.3	283	122	TO-263-2
B2D20120HC1		1200	10/20*	90*	1.4	140*	55	TO-247-3
B2D30120H1		1200	30	225	1.36	428	172	TO-247-2
B2D30120HC1		1200	15/30*	135*	1.35	220*	89	TO-247-3
B2D40120H1		1200	40	280	1.38	681	225	TO-247-2
B2D40120HC1		1200	20/40*	180*	1.36	259*	120	TO-247-3

20240429 MOS备份

Applications：EV motor controllers, On-board power supplies, Solar inverter, PV-Storage Integrated Converter, EV charging, UPS, etc.

Product advantage

Lower Specific

On-Resistance

Lower

Switching Losses

Higher

Reliability

Higher Operating

Junction Temperature

SiC MOSFET

Generation	Voltage	R_DS(on)	_TO-247-3	_TO-247-4	_{_TO-247PLUS-4}	_TO-263-7	_SOT-227
Gen 2	1200V	160mΩ	B2M160120H‍	B2M160120Z‍		B2M160120R
		80mΩ	B2M080120H‍‍	B2M080120Z‍‍		B2M080120R‍
		65mΩ	B2M065120H	B2M065120Z		B2M065120R
		40mΩ	B2M040120H	B2M040120Z		B2M040120R
		35mΩ			B2M035120YP
		20mΩ	*B2M020120H	*B2M020120Z	B2M020120Y	*B2M020120R	*B2M020120N
		12mΩ					B2M012120N
Gen 1	1200V	160mΩ	B1M160120HC
		80mΩ	B1M080120HC	B1M080120HK
		32mΩ	B1M032120HC	B1M032120HK

Note 1: * indicates planned product.

Note 2: Gen 1 SiC MOSFET is not for new design.

Note 3: Click on the highlighted links to download the datasheets

Pcore^TM2 E2B Full-SiC Half-Bridge MOSFET Module（20241010更新前备份）

BASiC Semiconductor introduces the Industrial Full-SiC MOSFET Power Module Pcore™2 E2B, compatible with EasyPACK™ 2B package. This product is designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, cross-talk immunity, and bipolar degradation immunity.

Product Features

- Higher wafer reliability

R_DS(on)degradation due to SiC crystal defects is significantly suppressed thanks to the new internal structure.

- Superior interference immunity characteristics

Wide gate-source voltage range (V_GS: -10V~+25V), and higher gate threshold voltage (V_GS(th).typ=4V), facilitating gate driver design.

- Enhanced thermal performance and packaging reliability

The introduction of high-performance Si₃N₄ AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.

Applications:

UPS, Fuel Cell DCDC, High Power Fast Charging Stations, etc.

Parameter List

Part No.	Data Sheet	V_DSS (V)	_{R_DS(on)} _{(mΩ) @ 25℃}	_{I_Dnom} _(A)	_{V_GS(op)} _(V)	V_GS(th) (V)	V_SD (V)	Q_G (nC)	Pin-Type	Package Name
BMH027MR07E1G3		650	27	40	+18/-4	4.0	1.75	65	Press-Fit	Pcore™4 E1B
BMF011MR12E1G3		1200	11	120	+18/-4	4.0	2.10	246	Press-Fit	Pcore™2 E1B
BMF240R12E2G3‍		1200	5.5	240	+18/-4	4.0	1.35	492	Press-Fit	Pcore™2 E2B

20250304碳化硅二极管备份

As a wide bandgap semiconductor material, SiC has better performance than traditional Silicon-based devices. The wide bandgap (3.26eV), high critical field (3 * 10⁶ V/cm) and high thermal conductivity (4.9W/cm·K) of SiC make power semiconductor devices more efficient and faster, and reduce the cost, volume and weight of equipment. The BASiC SiC Schottky diode provides standard industrial package with superior performance and high working effciency.

Product advantage


No Reverse Recovery Current	High Surge Current Capability	Low Reverse Leakage at High Temperature	High Avalanche Capability

Product list

B4D Series

Product	DataSheet	V_RRM（V）	I_F(A)	I_FSM(A)	V_F(V)	P_tot(W)	Q_C(nC)	Package Name
B4D30120H	‍	1200	30	210	1.50	326	122	TO-247-2
B4D40120H	‍	1200	40	280	1.49	455	182	TO-247-2
B4D60120H2	‍	1200	60	350	1.56	652	242	TO-247-2

B3D Series

Product	DataSheet	V_RRM（V）	I_F(A)	I_FSM(A)	V_F(V)	P_tot(W)	Q_C(nC)	Package Name
B3D04065KS	‍	650	4	36	1.37	54	12	TO-220-isolated
B3D04065E	‍	650	4	36	1.37	56	12	TO-252-3
B3D04065K	‍	650	4	36	1.37	65	12	TO-220-2
B3D06065E	‍	650	6	45	1.39	71	15	TO-252-3
B3D06065KS	‍	650	6	51	1.39	67	15	TO-220-isolated
B3D06065K	‍	650	6	51	1.39	85	15	TO-220-2
B3D06065KF	‍	650	6	45	1.39	71	15	TO-220F-2
B3D08065KS	‍	650	8	60	1.41	75	19	TO-220-isolated
B3D10065KF	‍	650	10	80	1.36	68	26	TO-220F-2
B3D10065E	‍	650	10	70	1.36	97	26	TO-252-3
B3D10065KS	‍	650	10	80	1.36	93	26	TO-220-isolated
B3D10065K		650	10	80	1.36	111	26	TO-220-2
B3D10065F	‍	650	10	80	1.36	123	26	TO-263-3
B3D20065F	‍	650	20	140	1.40	187	55	TO-263-3
B3D20065K	‍	650	20	140	1.40	227	55	TO-220-2
B3D20065H	‍	650	20	150	1.40	268	55	TO-247-2
B3D20065HC	‍	650	20	90	1.36	150	26	TO-247-3
B3D40065HC	‍	650	20/40*	150	1.40	250	110	TO-247-3
B3D80065H2		650	97	520	1.43	750	222	TO-247-2
B3D03120E		1200	3	27	1.47	75	14	TO-252-2
B3D05120E		1200	5	45	1.45	101	24	TO-252-2
B3D10120E		1200	10	90	1.40	158	50	TO-252-2
B3D10120H		1200	10	90	1.40	181	50	TO-247-2
B3D10120F		1200	10	90	1.40	169	50	TO-263-2
B3D15120H		1200	15	135	1.39	273	79	TO-247-2
B3D20120HC		1200	10/20*	90	1.40	167	50	TO-247-3
B3D20120H		1200	20	160	1.40	259	106	TO-247-2
B3D25120H	‍	1200	25	150	1.42	375	122	TO-247-2
B3D30120HC		1200	15/30*	120	1.39	214	79	TO-247-3
B3D30120H	‍	1200	30	270	1.39	469	172	TO-247-2
B3D40120H2		1200	40	320	1.39	600	221	TO-247-2
B3D40120HC		1200	40	160	1.40	258	106	TO-247-3
B3D50120H	‍	1200	50	400	1.44	750	265	TO-247-2
B3D50120H2	‍	1200	50	300	1.46	652	242	TO-247-2
B3D60120H2	‍	1200	60	540	1.42	938	342	TO-247-2

B2D Series

Product	DataSheet	V_RRM（V）	I_F(A)	I_FSM(A)	V_F(V)	P_tot(W)	Q_C(nC)	Package Name
B2D04065E1		650	4	31	1.3	90	14	TO-252-2
B2D04065D1		650	4	33	1.3	45	14	DFN 5*6
B2D04065KF1		650	4	41	1.33	59	13	TO-220F-2
B2D04065K1		650	4	34	1.33	91	14	TO-220-2
B2D06065E1		650	6	50	1.32	115	17	TO-252-3
B2D06065K1		650	6	44	1.31	133	18	TO-220-2
B2D06065KF1		650	6	59	1.31	52	18	TO-220F-2
B2D08065K1		650	8	64	1.32	148	24	TO-220-2
B2D10065E1		650	10	73	1.3	125	31	TO-252-3
B2D10065F1		650	10	70	1.31	145	30	TO-263-3
B2D10065K1		650	10	85	1.31	144	29	TO-220-2
B2D10065KF1		650	10	72	1.32	76	31	TO-220F-2
B2D16065HC1		650	8/16*	64*	1.32	164*	23	TO-247-3
B2D20065H1		650	20	146	1.34	300	60	TO-247-2
B2D20065HC1		650	10/20*	70*	1.34	172*	31	TO-247-3
B2D20065F1		650	20	140	1.32	230	59	TO-263-3
B2D20065K1		650	20	125	1.34	288	58	TO-220-2
B2D30065HC1		650	30	103*	1.32	217*	45	TO-247-3
B2D30065H1		650	30	200	1.38	500	83	TO-247-2
B2D40065H1		650	40	240	1.4	555	114	TO-247-2
B2D40065HC1		650	20/40*	146*	1.34	268*	59	TO-247-3
B2D02120E1		1200	2	22	1.35	77	13	TO-252-2
B2D02120K1		1200	2	20	1.35	80	13	TO-220-2
B2D05120E1		1200	5	57	1.3	122	31	TO-252-2
B2D05120K1		1200	5	55	1.3	147	32	TO-220-2
B2D10120E1		1200	10	95	1.38	151	49	TO-252-2
B2D10120H1		1200	10	90	1.36	143	51	TO-247-2
B2D10120HC1		1200	5/10*	55*	1.3	147*	31	TO-247-3
B2D10120K1		1200	10	90	1.37	185	51	TO-220-2
B2D15120H1		1200	15	135	1.34	283	84	TO-247-2
B2D16120HC1		1200	8/16*	80*	1.34	170*	48	TO-247-3
B2D20120H1		1200	20	190	1.35	366	120	TO-247-2
B2D20120F1		1200	20	180	1.3	283	122	TO-263-2
B2D20120HC1		1200	10/20*	90*	1.4	140*	55	TO-247-3
B2D30120H1		1200	30	225	1.36	428	172	TO-247-2
B2D30120HC1		1200	15/30*	135*	1.35	220*	89	TO-247-3
B2D40120H1		1200	40	280	1.38	681	225	TO-247-2
B2D40120HC1		1200	20/40*	180*	1.36	259*	120	TO-247-3
B2DM100120N1		1200	100*	540*	1.53	652*	465	SOT-227

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Shenzhen BASiC Semiconductor Ltd.

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Pcore™6 - Automotive 3-phase Full-bridge SiC MOSFET Module

Automotive Full-SiC Power Modules