Hybrid SiC Discrete Devices
Hybrid SiC Discrete Devices
Hybrid SiC Discrete Devices
- Detail
BASiC Hybrid SiC Discrete Devices combine Trench & Field Stop IGBT and SiC Schottky Diode to provide a solution for hard-switching topologies that combines quality and cost effectiveness. The hybrid devices seal Silicon IGBT and SiC Schottky Diode together to replace the conventional IGBT (Silicon IGBT co-packed with silicon Fast Recovery Diode) in certain applications, where the switching loss can be greatly reduced. They can be potentially applied in Energy Storage System (ESS), On Board Charger (OBC), Uninterruptible Power Supply (UPS), Solar String Inverter etc.
Product list
| Part Number | BV (V) | Data Sheet | IC(A) @100℃ | VCE (sat) (V) | VF (V) | IF(A) @100℃ | Eon (mJ) | Eoff (mJ) | Package Name | |
| BGH75N65HS1 | 650 | | 75 | 1.64 | 1.40 | 74 | 2.12 | 1.31 | TO-247-3 |
| BGH50N65HF1 | 650 | | 50 | 1.55 | 1.39 | 34 | 0.82 | 0.59 | TO-247-3 | |
| BGH50N65HS1 | 650 | | 50 | 1.55 | 1.30 | 51 | 0.82 | 0.59 | TO-247-3 | |
| BGH50N65ZF1 | 650 | | 50 | 1.55 | 1.39 | 34 | 0.41 | 0.72 | TO-247-4 | |
| BGH75N65HF1 | 650 | | 75 | 1.64 | 1.30 | 51 | 2.12 | 1.31 | TO-247-3 | |
| BGH75N65ZF1 | 650 | | 75 | 1.64 | 1.30 | 51 | 0.90 | 1.27 | TO-247-4 | |
| BGH40N120HS1 | 1200 | \ | 40 | 1.9 | 1.30 | 45 | 1.62 | 1.2 | TO-247-3 | |
BGH75N120HF1 | 1200 | | 75 | 2.2 | 1.30 | 45 | 4.49 | 2.58 | TO-247-3 |
