Die & Wafer Services
Die & Wafer Services
Die & Wafer Services
- Detail
Based on global advanced SiC epitaxial technology, BASiC has independently developed series products of bare dies. At present, 650V and 1200V SiC Schottky Diode and 1200V SiC MOSFET bare dies and wafer have been developed.
SiC Schottky Diode bare dies
| Part No. | VRRM （V） | IF (A) |
| BD2D04A065S1 | 650 | 4 |
| BD2D06A065S1 | 650 | 6 |
| BD2D08A065S1 | 650 | 8 |
| BD2D10A065S1 | 650 | 10 |
| BD2D15A065S1 | 650 | 15 |
| BD2D20A065S1 | 650 | 20 |
| BD2D30A065S1 | 650 | 30 |
| BD2D40A065S1 | 650 | 40 |
| BD2D02A120S1 | 1200 | 2 |
| BD2D05A120S1 | 1200 | 5 |
| BD2D08A120S1 | 1200 | 8 |
| BD2D10A120S1 | 1200 | 10 |
| BD2D15A120S1 | 1200 | 15 |
| BD2D20A120S1 | 1200 | 20 |
| BD2D30A120S1 | 1200 | 30 |
| BD2D40A120S1 | 1200 | 40 |
SiC MOSFET bare dies(1200V)
Part No. | VDS （V） | RDS(on) (mΩ) |
BD2M040A120S1 | 1200 | 40 |
| BD2M065A120S1 | 1200 | 65 |
