Pcore^TM2 E2B Full-SiC Half-Bridge MOSFET Module

BASiC Semiconductor introduces the Industrial Full-SiC MOSFET Power Module Pcore™2 E2B, compatible with EasyPACK™ 2B package. This product is designed based on a high-performance 6-inch wafer platform, demonstrating excellent performance in terms of on-resistance, switching loss, inference immunity, and bipolar degradation immunity.

Product Features

- Higher wafer reliability

R_DS(on) degradation due to SiC crystal defects is significantly suppressed thanks to the new internal structure.

- Superior interference immunity characteristics

Wide gate-source voltage range (V_GS: -10V~+25V), and higher gate threshold voltage (V_GS(th).typ=4V), facilitating gate driver design.

- Enhanced thermal performance and packaging reliability

The introduction of high-performance Si₃N₄ AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.

Applications:

UPS, Fuel Cell DCDC, High Power Fast Charging Stations, etc.

Parameter List