Product News | Pcore2 E2B Industrial Full-SiC Half-Bridge MOSFET Module
Pcore™2 E2B Package
1200V 240A High-power SiC MOSFET module
BMF240R12E2G3 is a 1200V 240A high power SiC MOSFET half-bridge module developed by BASiC Semiconductor to meet the needs of industrial customers for high efficiency and high-power density. The module adopts technologies such as Press-Fit crimping process, Temperature sensing with NTC circuit and high packaging reliability of Si3N4 AMB ceramic substrate, etc. The module has excellent performance in terms of on-resistance, switching loss, cross-talk immunity and reliability，and can be applied in high power fast charging stations, UPS, high-frequency DCDC converters, high-end industrial welding machine, etc.
Product Topology
Product Features
High wafer reliability
RDS(on) degradation due to SiC crystal defects is
significantly suppressed thanks to the new internal
structure.。
Superior interference immunity
Wide gate-source voltage range (VGS: -10V~+25V), and higher gate threshold voltage (VGS(th).typ=4V), facilitating gate driver design.
Enhanced thermal performance and packaging reliability
The introduction of high-performance Si3N4 AMB ceramic substrate and high-temperature solder improves the CTE mismatch in long-term high-temperature stress cycles.
Press-Fit Technology
NTC Temperature Sensor
Advantages
Low on-resistance
Low switching loss
Improve system efficiency to reduce system cooling requirements
Higher switching frequency to reduce device size and increase power density
High threshold voltage to reduce the risk of false conduction
Applications
High Power Fast Charging Stations
UPS
Energy Storage System
High-end Industrial Welding Machines
High-frequency DCDC Converters
Industrial Servo Motor Drives
Product List
If you are interested in BASiC products, please contact us!
Tel：+86-755-86713170
Mail：inquiry@basicsemi.com