From June 13-15, the 17th (2024) International Photovoltaic Power Generation and Smart Energy Conference & Exhibition(SNEC)was held in Shanghai. This exhibition gathered more than 3,500 global PV industry enterprises to jointly display the most cutting-edge scientific and technological achievements and products, attracting more than 500,000 professional visitors.
BASiC Semiconductor showcased a range of new products at the exhibition, including:
2000V/1700V high-voltage SiC MOSFETs
Third-generation SiC MOSFETs • Industrial SiC power modules PcoreT™2 E1B & E2B
Industrial SiC half-bridge top-side cooling MOSFET modules
Industrial SiC half-bridge MOSFET modules Pcore™2 ED3
Dual-channel isolated gate drivers BTD25350 series
Alongside these new products, BASiC Semiconductor also presented its full series of SiC diodes, gate driver ICs and driver boards. These exhibits comprehensively demonstrated BASiC Semiconductor's innovative technical capabilities in the field of power devices.
At the exhibition, BASiC Semiconductor's booth was crowded with visitors who came to exchange and discuss the SiC technologies and products. In the future, BASiC Semiconductor will continue to adhere to the concept of "innovation, quality, service", and continue to increase investment in research and development, launch more high-performance, high-quality SiC power device products, and work together with global partners.