
BASiC Semiconductor launches 62mm industrial half-bridge SiC MOSFET module that adopts the latest generation of SiC MOSFET technology. This module design has been further optimized to reduce module stray inductance and taking advantage of the compact footprint of the conventional 62mm package, which allows the high-frequency performance of SiC MOSFET to be fully utilized.
Product Topology

Product Features
New generation of SiC MOSFET technology with betterperformance
Low on-resistance, excellent high-temperature on-resistance performance
Low switching losses, high switching frequence
Si3N4 ceramic substrate,with excellent power cycling capability
High reliability and power density
Low stray inductance design, ≤14nH
Copper base plate for optimized heat dissipation
Applications
ESS Systems
Welding Machine Power Supplies
Inductive Heating
PV Inverters
Traction Auxiliary Converters
Applications
