
From September 24th to 26th, PCIM Asia Shanghai 2025 was grandly opened in Shanghai. BASiC Semiconductor and its partner Toshiba Electronic Devices & Storage Corporation jointly participated in the exhibition, showcasing their jointly developed power semiconductor products and solutions. BASiC also released multiple new products including SiC MOSFETs discrete components in new package, industrial & automotive SiC power modules and gate driver solutions.
BASiC Semiconductor introduced industrial SiC MOSFET modules in ED3, E3B, L3 and 62mm packages, along with the plug-and-play module driver solutions. The E3B-packaged SiC module performs well in on-resistance, switching losses, stray inductance, and reliability, and can be applied in APF, PCS, DC/DC converters, high-power charging stations and etc. The 62mm SiC module retains the compact footprint of the conventional 62mm package while the stray inductance is significantly reduced thanks to its innovative module design. This fully leverages the high-frequency performance of the SiC MOSFET dies, making the product suitable for energy storage systems, welding power supplies, induction heating, and photovoltaic inverters.

To meet the urgent demand for high efficiency and power density in EV motor drives, BASiC Semiconductor has launched automotive SiC modules in HPD Mini, PM6, and PCB-Die-Embedding packages. The HPD Mini module is designed following the trend of system integration and miniaturization, offering screw-lock and busbar-stacked versions that reduce stray inductance, aligning well with system assembly trends. The PM6 molded module features compact dimensions, low stray inductance, and low resistance, making it suitable for regular or wheel hub motor controllers on electrical vehicles and aircraft motor drives. The embedded module is available in two versions: AMB and Copper Coin, which can meet the requirements of multi power range applications with extremely low stray inductance to meet future development trends in main motor drive applications.

During the PCIM exhibition, BASiC Semiconductor also released several new SiC MOSFET products adopting advanced top-side cooling packages, including T2PAK-7, QDPAK, and TOLT. These products overcome traditional thermal bottlenecks by conducting heat directly to the heat sink through the metal block on top of the package (rather than the PCB), significantly shortening the cooling path and enhancing heat dissipation efficiency. This substantially reduces chip junction temperature while improves system power density and reliability. This series is particularly suited for applications that require high heat dissipation, compact size, high efficiency and reliability, such as server power supplies, onboard chargers, photovoltaic inverters, etc. It represents a key packaging technology for utilising the high-frequency, high-efficiency advantages of SiC MOSFET devices.



At the joint exhibition area, BASiC Semiconductor collaborated with strategic partner Toshiba Electronic Devices & Storage Corporation to showcase jointly developed industrial SiC MOSFET modules in E1B, E2B, E3B, and L3 packages. Through technical cooperation and complementary resources, both parties are jointly promoting the large-scale application of SiC power devices in automotive and industrial sectors, delivering higher-performance and highly reliable system solutions to customers.
