Epitaxial Wafers

BASiC Semiconductor produces SiC epi material up to 250 mm with best in class uniformity. We offer a complete SiC material solution with flexible specifications.

▶  Thick epilayers With or without buffer, low doped layers up to 250µm

▶  Multi-layer structures Various doping levels, including pn-junctions

▶  In process epitaxy Embedded & buried structures, contact layers