Pcore™2
With high current density, the automotive DCM SiC MOSFET Module Pcore™2 is specifically designed for the main traction inverter of new energy vehicles.
This product is provided in the industry’s mainstream DCM package, employing advanced pressure-assisted silver sintering process, thick copper wire bonding technology,Si3N4 AMB ceramic substrate and a direct liquid-cooled Pin Fin structure. The module is characterised by low switching losses, low on-resistance, high blocking voltage, high current density, and high reliability. It can support continuous operation with peak junction temperature up to 175°C and continuous peak phase current output of more than 650Arms.
Product Features
Trench-type, low RDS(on) SiC MOSFET chip
Double-side pressure-assisted silver sintering
Die Top System (DTS) technology
High-density copper wire bonding technology
High-performance Si3N4 AMB ceramic substrate
Direct liquid-cooled Pin Fin structure
Lower thermal resistance Rth(j-f)<0.09 K/W
Advantages
Low switching loss
Low stray inductance
High output power density
Continuous operating junction temperature up to 175°C
Optimised features for main drive inverter applications
Multiple chip options and parallel connection
High reliability
Applications
Electric drive systems for new energy passenger cars, commercial vehicles, etc.
Fuel Cell Energy Conversion Systems
Product List
If you are interested in BASiC products, please contact us!
电Tel:0755-86706526
Mail:autobu@basicsemi.com