BASiC Semiconductor Showcases Full-Scenario SiC Solutions at PCIM Asia 2026
BASiC Semiconductor Showcases Full-Scenario SiC Solutions at PCIM Asia 2026
From August 26 to 28, the PCIM Asia Shenzhen 2026 grandly opened in Shenzhen. BASiC Semiconductor showcased its full series of SiC power devices, presenting a complete product matrix and system solutions covering high, medium, and low power scenarios across four major fields: AI computing power, consumer electronics, electric vehicles, and industrial applications.
At this exhibition, BASiC Semiconductor created four themed zones, combining physical exhibits with system solutions to comprehensively demonstrate its strengths in technological breakthroughs, product innovation, and large-scale application.
AI Computing Power
High-Power SiC MOSFETs Empowering Computing Power Supplies
With the demand for power supply architecture upgrades driven by surging computing power, BASiC Semiconductor has developed a high-power SiC MOSFET series. Featuring low conduction loss, high thermal conductivity, high reliability, and high cost-effectiveness, it provides high-efficiency support for AI server power supplies. The series is available in multiple packages including TOLL, TOLT, QDPAK, and T2PAK-7, covering the full resistance range from 650V to 1700V, and can be widely applied to HVDC, AI server power supplies, data center power supplies, UPS, and high-voltage auxiliary power supplies.
At the AI Power Supply Application Forum held alongside the exhibition, Shen Junwu, Product Manager of BASiC Semiconductor, delivered a keynote speech titled “Application of SiC Technologies in Intelligent Computing Center Power Systems”, providing an in-depth analysis of how SiC empowers the energy efficiency of AI computing infrastructure.
Consumer Electronics
Low-Power SiC MOSFETs Building a New Fast-Charging Ecosystem
In the consumer electronics zone, BASiC Semiconductor showcased its consumer SiC MOSFET product line covering a resistance range from 120mΩ to 2000mΩ. Developed on a third-generation SiC MOSFET platform, the series features high power density, low conduction loss, high thermal conductivity, and high reliability, helping fast-charging devices achieve smaller size, higher efficiency, and better heat dissipation.
Industrial Application
Modules and Driver Solutions Working in Concert
Industrial power is a key cornerstone of BASiC Semiconductor's SiC technologies. The zone showcased a complete industrial-grade solution from modules to matching drivers, covering energy storage systems, photovoltaic inverters, solid-state circuit breakers, induction heating, and DCDC converters and other applications.
The ED3 Industrial SiC MOSFET bidirectional common-source switch module made its debut as a major new product in the industrial sector. Featuring a bidirectional common-source switch design, the product offers low on-resistance, low switching losses, high power density, and fast switching response. With high-performance Si₃N₄ AMB and high-temperature solder for enhanced reliability, it is precisely suited for cutting-edge applications such as solid-state circuit breakers, matrix converters, battery pack disconnect units, and data centers.
The Pcore™6 E3B Flying-Capacitor 3-Level Boost SiC MOSFET Half-bridge Module adopts new-generation 1400V SiC MOSFET and 1400V SiC SBD technologies. It integrates two sets of flying-capacitor three-level boost topologies and reserves pins for pre-charge circuits and snubber capacitors. Suitable for string photovoltaic inverters and energy storage systems, it significantly improves system efficiency.
Also showcased were the ED3 half-bridge module, 62mm-packaged half-bridge module, 34mm-packaged half-bridge module, E2B/E1B/EP2 series modules, and matching driver solutions, covering a wide range of industrial scenarios and demonstrating the company's complete service capability from devices to systems.
Electric Vehicles
Automotive Module Matrix Driving E-Drive Upgrades
As one of the main applications for SiC, electric vehicles were well represented as BASiC Semiconductor exhibited a number of automotive SiC power modules. Among them, the automotive SiC embedded module adopts new-generation SiC MOSFET, based on a full-bridge 4-chip parallel design, with an ultra-low parasitic inductance of 1.2nH and AMB embedded process for efficient heat dissipation and high system integration. It is suitable for NEV power systems, industrial inverters, photovoltaic inverters, and OBC/DCDC.
The Pcore™6 HPD Mini SiC MOSFET module features an innovative HPD Mini package——20% smaller in volume than the standard HPD package. Equipped with self-developed third-generation automotive SiC MOSFETs, Si₃N₄ AMB ceramic substrates, and pressure silver sintering technologies, the module offers stray inductance ≤6nH and high system integration，specifically designed for NEV main drive inverters, motor controllers, and compressor drives.
The Pcore™6 HPD SiC MOSFET module adopts a DC terminal laminated busbar design and double-sided pressure silver sintering process, along with laser welding and DTS+Cu bonding. It meets the needs of next-generation e-drive systems with superior electrical performance and reliability.
In addition, the booth displayed Pcore™2 PM6 module, Pcell™7 module and Pcore™1 TPAK module, jointly building a complete automotive solution matrix covering multiple power ranges.
During the exhibition, BASiC's booth attracted numerous industry customers and professional visitors. The company's technical team held in-depth discussions with guests on the application of SiC devices in frontier fields such as AI computing power, electric vehicles, and photovoltaic energy storage systems.
In a new era driven by both energy transition and AI computing power, BASiC Semiconductor will remain committed to the wide-bandgap semiconductor track. With continuous technological innovation and reliable product delivery, the company will work with customers and partners to build an efficient, clean, and intelligent new energy world.