The low-power SiC MOSFET series highlighted by BASiC Semiconductor is developed on a third-generation SiC MOSFET technology platform and precisely targets consumer electronics applications such as fast-charging adapters, PD power supplies, LED driver power supplies, and TV power supplies. With core advantages including high power density, low conduction losses, high thermal conductivity and high reliability, it offers a new path for fast-charging devices to achieve smaller size, higher efficiency, and better heat dissipation.

The series covers voltages from 650V to 800V and RDS(on) from 90mΩ to 1Ω. It is available in wafers, bare dies, and packages including TO-220F-3, TO-252-3, DFN 5×6, DFN 8×8, TO-263-3, and TOLL, flexibly adapting to fast-charging design requirements at different power levels.

In addition, BASiC Semiconductor will soon release SiC MOSFET products with higher milliohm-level resistance, including 2Ω and 3Ω, further enriching its product matrix to meet the massive co-packaged application needs of more low-power consumer power supplies.

At the exhibition, BASiC Semiconductor also displayed an AC-DC power adapter reference design demo board equipped with SiC MOSFETs. The solution features high withstand voltage, low conduction loss, and excellent EMI characteristics, and supports miniaturized product design. It can be widely used in PD chargers, adapters, LED driver power supplies, and TV power supplies, providing a complete device to system for consumer power supply design.

At the exhibition, Liang Zhiding, Deputy Director of Technical Support at BASiC Semiconductor, delivered a keynote speech titled “The Dividend of Smooth C-V — SiC MOSFET Replacing Superjunction: From EMI Advantages to System Cost Reduction”.